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| BAT 14- ...S BAT 14- ... S Silicon Schottky Diodes q q q q BAT 14- ... S Beam lead technology Low dimension High performance Medium barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S Maximum Ratings Parameter Symbol Values BAT 14-020 S BAT 14-050 S Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range VR IF Tj Tstg Top 4 100 175 - 65 ... + 150 - 65 ... + 150 BAT 14-090 S BAT 14-110 S 4 50 V mA C Unit Marking - Ordering Code Q62702-D1258 Q62702-D1267 Q62702-D1275 Q62702-D1284 Pointed cathode Pin Configuration Package1) S 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BAT 14- ...S BAT 14- ... S Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 10 A Diode capacitance VR = 0, f = 1 MHz BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S VF BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S FSSB - - - - rf BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S - - - - 3.5 4.0 7.0 10.0 - - - - 6.0 6.5 6.5 7.0 - - - - - - - - - - - - 0.45 0.47 0.49 0.50 0.55 0.57 0.60 0.65 - - - - - - - - dB V(BR) 4 CT - - - - 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 V - - pF V Values typ. max. Unit Forward voltage IF = 1 mA IF = 10 mA Single sideband noise figure FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz f = 3.0 GHz BAT 14-020 S f = 6.0 GHz BAT 14-050 S f = 9.3 GHz BAT 14-090 S f = 16 GHz BAT 14-110 S Differential forward resistance IF = 10 mA IF = 50 mA Semiconductor Group 2 |
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